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Axeme - Hwaling Technology Co., Ltd.

256MB DDR SDRAM

Discover the high-speed performance of the 256MB DDR SDRAM from Axeme - Hwaling Technology Co., Ltd.. Designed for demanding applications, this DDR SDRAM module features the advanced H2A22561643B chip. Fabricated with an ultra-high-performance CMOS process, it offers 256M bits organized into 4 Mega words across 4 banks, each 16 bits wide. Our DDR SDRAM uses a double data rate (DDR) architecture, ensuring efficient high-speed operation. This design allows for data transfer on both the rising and falling edges of the system clock, effectively doubling the data bandwidth at the I/O pins. The 256MB DDR SDRAM is available in a TSOPII 66P 400mil package, making it ideal for applications that require superior speed and reliability. As a leading DDR SDRAM supplier, Axeme - Hwaling Technology Co., Ltd. is committed to delivering top-tier memory solutions that meet your performance and quality needs.

H2A22561643B

256Mb (4Mx4Banks×16) DDR SDRAM

The H2A22561643B is high speed Synchronous graphic RAM fabricated with ultra high performance CMOS process containing 256M bits which organized as 4Mega words x 4 banks by 16 bits.
The 256Mb DDR SDRAM uses a double data rate architecture to accomplish high-speed operation. The data path internally prefetches multiple bits and It transfers the data for both rising and falling edges of the system clock. It means the doubled data bandwidth can be achieved at the I/O pins.
Available packages: TSOPII 66P 400mil.
Features :

  • 2.5V ± 0.2V Power Supply for DDR 400 / 333
  • Up to 250 MHz Clock Frequency
  • Double Data Rate architecture; two data transfers per clock cycle
  • Differential clock inputs (CLK and /CLK )
  • DQS is edge-aligned with data for Read; center-aligned with data for Write
  • CAS Latency: 2, 2.5 and 3
  • Burst Length: 2, 4 and 8
  • Auto Refresh and Self Refresh
  • Precharged Power Down and Active Power Down
  • Write Data Mask
  • Write Latency = 1
  • Maximum burst refresh cycle: 8
  • Interface: SSTL_2
  • Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant

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Introducing the 256MB DDR SDRAM from Axeme - Hwaling Technology Co., Ltd., a leading DDR SDRAM supplier. The 256MB DDR SDRAM provides exceptional performance with a clock frequency of up to 250 MHz and operates on a 2.5V ± 0.2V power supply, supporting DDR 400 and 333 speeds. This high-performance DDR SDRAM features a double data rate architecture, enabling two data transfers per clock cycle. It is designed with differential clock inputs (CLK and /CLK) and edge-aligned DQS for reads and center-aligned for writes, ensuring precise data handling. The module supports CAS Latency options of 2, 2.5, and 3, as well as burst lengths of 2, 4, and 8. Additional features include auto-refresh and self-refresh modes, precharged and active power down capabilities, and a write data mask. The module boasts a write latency of 1 and a maximum burst refresh cycle of 8. Packaged in a RoHS-compliant TSOP II 66-pin format with lead-free materials, this DDR SDRAM is designed for reliability and environmental compliance. Trust Axeme - Hwaling Technology Co., Ltd. for top-quality 256MB DDR SDRAM solutions.