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Synchronous DRAM
Discover the advanced capabilities of the SDRAM synchronous DRAM from Axeme - Hwaling Technology Co., Ltd.. This high-performance SDRAM is organized as 512K words x 4 banks, each with a 32-bit wide data interface. The SDRAM synchronous DRAM ensures synchronization with the positive edge of the clock, providing reliable and consistent data access.
Featuring burst-oriented access, this SDRAM supports various burst lengths including 1, 2, 4, 8, or full page, optimizing data throughput and efficiency. Its internal counter automates column address generation during burst operations, while random column reads are also facilitated by providing the address at each clock cycle. The multiple bank structure allows for efficient interleaving to minimize precharge times, enhancing overall performance. The H2A164M3233N is ideal for applications requiring high-speed data access and reliable synchronization. Optimize your memory solutions with the H2A164M3233N SDRAM from Axeme - Hwaling Technology Co., Ltd., and experience the precision and efficiency of advanced synchronous DRAM technology.
Featuring burst-oriented access, this SDRAM supports various burst lengths including 1, 2, 4, 8, or full page, optimizing data throughput and efficiency. Its internal counter automates column address generation during burst operations, while random column reads are also facilitated by providing the address at each clock cycle. The multiple bank structure allows for efficient interleaving to minimize precharge times, enhancing overall performance. The H2A164M3233N is ideal for applications requiring high-speed data access and reliable synchronization. Optimize your memory solutions with the H2A164M3233N SDRAM from Axeme - Hwaling Technology Co., Ltd., and experience the precision and efficiency of advanced synchronous DRAM technology.
H2A164M3233N
64Mb (512K×4Banks×32) Synchronous DRAM
The H2A164M3233N is Synchronous Dynamic Random Access Memory (SDRAM) organized as 512K words x 4 banks by 32 bits. All inputs and outputs are synchronized with the positive edge of the clock.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time.
Features :
- 512K Words × 4 banks × 32 bits organization
- Single 3.3V±0.3V Power Supply
- Self Refresh Mode
- CAS Latency: 2 and 3
- Burst Length: 1, 2, 4, 8 and full page
- Burst Read, Single Writes Mode
- Byte Data Controlled by DQM
- Auto-precharge and Controlled Precharge
- 4K Refresh cycles / 64 mS
- Interface: LVTTL
- Packaged in TSOP II 86 pin, 400x875 mil
- Pb and Halogen Free
Explore the superior performance of the synchronous DRAM from Axeme - Hwaling Technology Co., Ltd.. This advanced SDRAM features a 512K words x 4 banks x 32 bits organization, offering robust data handling capabilities. Designed to operate with a single 3.3V±0.3V power supply, it includes a self-refresh mode and supports CAS Latency of 2 and 3, ensuring rapid data access.
The H2A164M3233N provides flexible burst length options—1, 2, 4, 8, and full page—enabling efficient burst reads and single writes. Data management is enhanced with Byte Data Controlled by DQM, auto-precharge, and controlled precharge features. It supports 4K refresh cycles every 64 milliseconds and interfaces with LVTTL for reliable connectivity. Packaged in a compact TSOP II 86-pin format (400x875 mil), this synchronous DRAM is Pb and Halogen free, aligning with modern environmental standards. Upgrade your systems with the precision and reliability of Axeme - Hwaling Technology Co., Ltd.'s SDRAM synchronous DRAM technology.
The H2A164M3233N provides flexible burst length options—1, 2, 4, 8, and full page—enabling efficient burst reads and single writes. Data management is enhanced with Byte Data Controlled by DQM, auto-precharge, and controlled precharge features. It supports 4K refresh cycles every 64 milliseconds and interfaces with LVTTL for reliable connectivity. Packaged in a compact TSOP II 86-pin format (400x875 mil), this synchronous DRAM is Pb and Halogen free, aligning with modern environmental standards. Upgrade your systems with the precision and reliability of Axeme - Hwaling Technology Co., Ltd.'s SDRAM synchronous DRAM technology.