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Our company is one of the main producers of Memory IC, Memory Module, DRAM IC in Taiwan. Being a qualitative firm, we have always made sure that all the products are as per the predefined standards of the industry and also assure a long lasting quality.
H2A11281633B
128Mb (2M×4Bank×16) Synchronous DRAM
The H2A11281633B is Synchronous Dynamic Random Access Memory (SDRAM) organized as 2Mega words x 4 banks by 16 bits. All inputs and outputs are synchronized with the positive edge of the clock.
The 128Mb SDRAM uses synchronized pipelined architecture to achieve high speed data transfer rates and is designed to operate at 3.3V low power memory system. It also provides auto refresh with power saving / down mode. All inputs and outputs voltage levels are compatible with LVTTL.
Available packages: TSOPII 54P 400mil.
The 128Mb SDRAM uses synchronized pipelined architecture to achieve high speed data transfer rates and is designed to operate at 3.3V low power memory system. It also provides auto refresh with power saving / down mode. All inputs and outputs voltage levels are compatible with LVTTL.
Available packages: TSOPII 54P 400mil.
- All Inputs are Sampled at the Rising Edge of the System Clock
- Auto Refresh and Self Refresh
- 4,096 Refresh Cycles / 64ms (15.625us)
Features :
- Fully Synchronous to Positive Clock Edge
- Single 3.3V ±0.3V Power Supply
- LVTTL Compatible with Multiplexed Address
- Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page
- Programmable CAS Latency (C/L) - 2 or 3
- Data Mask (DQM) for Read / Write Masking
- Programmable Wrap Sequence
– Sequential (B/L = 1/2/4/8/full Page)
– Interleave (B/L = 1/2/4/8) - Burst Read with Single-bit Write Operation
As an industry leader of SDRAM, we offer quality H2A11281633B. You are invited to call us, chat with us, or visit us at our Online Shop, where we are happy to serve and assist you every step of the way.