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DDR SDRAM Supplier
Axeme - Hwaling Technology Co., Ltd. believes that customer service is the most important aspect of our business, and we want to be there whenever and wherever you need us. We believe that our DDR SDRAM, H2A2 DDR SDRAM have very great potential for this type of development. We have been specializing in manufacturing DDR SDRAM, H2A2 DDR SDRAM for many years. We have confidence in our quality. Our system is designed to fit the customer’s standards, as well as applicable domestic and international standards.
H2AD16G16F6S
16Gb (1Gbx16) DDR5 SDRAM
The 16Gb DDR5 SDRAM is organized as a 64Mbit x16 I/Os x 16banks device. This synchronous device achieves high speed double- data-rate transfer rates of up to 5600Mb/ sec/ pin (DDR5-5600) for general applications.
The chip is designed to comply with the following key DDR5 SDRAM features such as posted CAS, Programmable CWL, Internal Calibration via MPC, On Die Termination via Mode Register setting and Asynchronous Reset.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion.
The address bus is used to convey row, column, and bank address information in a RAS/ CAS multiplexing style. The DDR5 device operates with 1.1V (1.067V ~ 1.166V) and 1.8V (1.746V~1.908V) power supply.
The 16Gb DDR5 device is available in 106ball FBGAs (x16).
The chip is designed to comply with the following key DDR5 SDRAM features such as posted CAS, Programmable CWL, Internal Calibration via MPC, On Die Termination via Mode Register setting and Asynchronous Reset.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion.
The address bus is used to convey row, column, and bank address information in a RAS/ CAS multiplexing style. The DDR5 device operates with 1.1V (1.067V ~ 1.166V) and 1.8V (1.746V~1.908V) power supply.
The 16Gb DDR5 device is available in 106ball FBGAs (x16).
Features :
- VDD = VDDQ = 1.1V (1.067V(- 3%) ~ 1.166V(+6%)).
- VPP = 1.8V(1.746V(-3%) ~ 1.908V(+6%)).
- Package : x16-16Banks (4 Bank Groups).
- JEDEC standard compliant.
- Programmable CAS Write Latency (CWL) = RL-2.
- 16-bit pre-fetch.
- Burst Length: 16 by default. 8 with tCCD=8, which does not allow. gapless READ or WRITE, where BC8 and BL32 refer to CA5BL*=L.
- Bi-directional Differential Data-Strobe.
- 2N mode.
- On Die Termination (ODT) via Mode Register setting.
- Average Refresh period 3.9us at lower than TCASE 85°C, 1.95us at 85°C < TCASE < 95 °C.
- Connectivity Test Mode (TEN) is supported.
- Asynchronous Reset.
- Package: 106 balls FBGA - x16.
- All of Lead-Free products are compliant for RoHS.
- All of products are Halogen-free.
- POD (Pseudo Open Drain) interface for data input/ output,command and address input.
- sPPR and hPPR capability.
- External VPP for DRAM activating power.
- JRefresh Management (RFM) is not required.
- CAI (Command Address Inversion).
- On-Die ECC is supported with ECC Transparency and ErrorCheck and Scrub (ECS).
- Command Address Inversion (CAI).
With our well equipped low-cost operation in Taiwan, Axeme - Hwaling Technology Co., Ltd. as a group is well positioned in the competitive market of DDR SDRAM, H2A2 DDR SDRAM design and manufacturing. Axeme - Hwaling Technology Co., Ltd. has earned an impressive reputation for providing outstanding service and developing efficient, comprehensive global supply chain solutions. If you want to make a suggestion or place a feedback about our staff, service or website, please phone or email to us, we will reply you as soon as possible.