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Low Power SDRAM
Axeme - Hwaling Technology Co., Ltd. offers the low power SDRAM, designed to meet the demands of modern electronics with superior efficiency and performance. Utilizing LPDDR4 SDRAM technology, this high-speed module leverages a double data rate architecture on the Command/Address (CA) bus, effectively minimizing the number of input pins required. With its 16n-prefetch interface, it achieves rapid data transfers by handling two data per clock cycle. This SDRAM is optimized for both read and write operations through burst-oriented access, ensuring swift and reliable performance. The low power SDRAM seamlessly supports DDR4 SDRAM standards, making it a versatile choice for various applications needing low power consumption and high-speed data handling.
H2AB08G32E6R
8Gb (32Mx8Banks×32) Low Power DDR4 SDRAM
H2AB08G32E6R uses the double data rate architecture on the Command/Address (CA) bus to reduce the number of input pins in the system. Each command uses one clock cycle,during which command information is transferred on both the positive and negative edge of the clock. To achieve high-speed operation,our H2AB08G32E6R
SDRAM adopt 16n-prefetch interface designed to transfer two data per clock cycle at the I/O pins. A single read or write access for the H2AB08G32E6R effectively consists
of a single 8n-bit wide, one clock cycle data transfer at the internal SDRAM core and eight corresponding n-bit wide,one-half-clock-cycle data transfer at the I/O pins. Read and write accesses to the H2AB08G32E6R are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence.
For H2AB08G32E6R devices, accesses begin with the registration of an Active command, which is then followed by a Read or Write command. The address and BA bits registered coincident with the Active command are used to select the row and the Bank to be accessed. The address bits registered coincident with the Read or Write command are used to select the Bank and the starting column location for the burst access.
SDRAM adopt 16n-prefetch interface designed to transfer two data per clock cycle at the I/O pins. A single read or write access for the H2AB08G32E6R effectively consists
of a single 8n-bit wide, one clock cycle data transfer at the internal SDRAM core and eight corresponding n-bit wide,one-half-clock-cycle data transfer at the I/O pins. Read and write accesses to the H2AB08G32E6R are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence.
For H2AB08G32E6R devices, accesses begin with the registration of an Active command, which is then followed by a Read or Write command. The address and BA bits registered coincident with the Active command are used to select the row and the Bank to be accessed. The address bits registered coincident with the Read or Write command are used to select the Bank and the starting column location for the burst access.
Features :
- Frequency to 1600MHz (data rate: 3200Mbps/pin)
- 16n prefetch DDR architecture
- 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry
- Bidirectional/ differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL)
- Programmable Burst Lengths: 16,32
- Partial-array self refresh (PASR)
- Selectable output drive strength (DS)
- Clock Stop capability during idle period
- RoHS-compliant, "green" packaging
- Programmable VSS (ODT) termination
- Auto Refresh and Self Refresh Modes
- FBGA "green" package - 200-ball VFBGA
- Operating temperature range:
Single Low: -30°C to 85°C
Commercial: 0°C to 85°C - Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- VDD1/ VDD2/ VDDQ= 1.8V/ 1.1V/ 1.1V or 0.6V
Axeme - Hwaling Technology Co., Ltd. presents the low power SDRAM, featuring advanced LPDDR4 SDRAM technology and compliant with DDR4 SDRAM standards. This high-performance module operates at a frequency of up to 1600MHz with a data rate of 3200Mbps per pin, ensuring rapid and efficient data handling. The low power SDRAM utilizes a 16n-prefetch DDR architecture and supports eight internal banks per channel for simultaneous operations. With programmable READ/WRITE latencies, burst lengths, and partial-array self-refresh (PASR), it is optimized for both power efficiency and performance. The module is housed in a RoHS-compliant 200-ball VFBGA package and offers features like selectable output drive strength, clock stop capability, and auto-refresh modes, making it ideal for various applications requiring low power consumption and high-speed performance.