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LPDDR4X SDRAM
Axeme - Hwaling Technology Co., Ltd.'s H2AB16G32E6C is an advanced LPDDR4X SDRAM designed to deliver high-speed performance with efficiency. Leveraging the double data rate architecture on the Command/Address (CA) bus, this LPDDR4X SDRAM minimizes the number of input pins required in your system. Each command transfers data on both the positive and negative clock edges, optimizing data throughput. This LPDDR4X SDRAM utilizes a 16n-prefetch interface to achieve remarkable data transfer rates, effectively transferring two data bits per clock cycle at the I/O pins. The H2AB16G32E6C ensures that each read or write operation consists of an 8n-bit wide data transfer within one clock cycle internally, and eight n-bit wide data transfers at the I/O pins over half a clock cycle.
Designed for burst-oriented access, the LPDDR4X SDRAM begins with an Active command followed by Read or Write commands, enabling efficient row and bank access. The smart architecture of this LPDDR4X SDRAM ensures reduced power consumption while maintaining high performance, making it an ideal choice for modern applications requiring low power and high-speed memory solutions. For more details on our LPDDR4 SDRAM and other low power SDRAM, visit our website or contact us.
Designed for burst-oriented access, the LPDDR4X SDRAM begins with an Active command followed by Read or Write commands, enabling efficient row and bank access. The smart architecture of this LPDDR4X SDRAM ensures reduced power consumption while maintaining high performance, making it an ideal choice for modern applications requiring low power and high-speed memory solutions. For more details on our LPDDR4 SDRAM and other low power SDRAM, visit our website or contact us.
H2AB16G32E6C
16Gb (512Meg×32) Low Power DDR4 SDRAM
H2AB16G32E6C uses the double data rate architecture on the Command/Address (CA) bus to reduce the number of input pins in the system. Each command uses one clock cycle,during which command information is transferred on both the positive and negative edge of the clock. To achieve high-speed operation, our H2AB16G32E6C SDRAM adopt 16n-prefetch interface designed to transfer two data per clock cycle at the I/O pins.
A single read or write access for the H2AB16G32E6C effectively consists of a single 8n-bit wide, one clock cycle data transfer at the internal SDRAM core and eight corresponding n-bit wide,one-half-clock-cycle data transfer at the I/O pins. Read and write accesses to the H2AB16G32E6C are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. For H2AB16G32E6C devices, accesses begin with the registration of an Active command, which is then followed by a Read or Write command. The address and BA bits registered coincident with the Active command are used to select the row and the Bank to be accessed. The address bits registered coincident with the Read or Write command are used to select the Bank and the starting column location for the burst access.
A single read or write access for the H2AB16G32E6C effectively consists of a single 8n-bit wide, one clock cycle data transfer at the internal SDRAM core and eight corresponding n-bit wide,one-half-clock-cycle data transfer at the I/O pins. Read and write accesses to the H2AB16G32E6C are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. For H2AB16G32E6C devices, accesses begin with the registration of an Active command, which is then followed by a Read or Write command. The address and BA bits registered coincident with the Active command are used to select the row and the Bank to be accessed. The address bits registered coincident with the Read or Write command are used to select the Bank and the starting column location for the burst access.
Features :
- Ultra-low-voltage core and I/O power supplies
- VDD1 = 1.70–1.95V; 1.80V nominal
- VDD2 = 1.06–1.17V; 1.10V nominal
- VDDQ = 0.57–0.65V; 0.60V nominal
- Frequency range
- 1866MHz(data rate (per pin) range: 3733Mb/s) - 16n prefetch DDR architecture
- 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry
- Bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL)
- Programmable and on-the-fly burst lengths = 16, 32
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- On-chip temperature sensor to control self refresh rate
- Partial-array self refresh (PASR)
- Selectable output drive strength (DS)
- Clock-stop capability
- RoHS-compliant, “green” packaging
- Programmable VSS (ODT) termination
Discover the cutting-edge performance of Axeme - Hwaling Technology Co., Ltd.'s LPDDR4X SDRAM, a top-tier choice for low power and high-speed memory applications. Our LPDDR4X SDRAM operates with ultra-low-voltage power supplies: VDD1 ranging from 1.70–1.95V, VDD2 from 1.06–1.17V, and VDDQ at 0.57–0.65V, ensuring efficient power usage. With a frequency range of up to 1866MHz and a data rate of 3733Mb/s per pin, this low power SDRAM delivers exceptional performance. The H2AB16G32E6C features a 16n prefetch DDR architecture, 8 internal banks per channel, and supports bidirectional/differential data strobe per byte lane for enhanced data handling. Programmable READ and WRITE latencies, along with on-the-fly burst lengths of 16 and 32, offer flexibility and high efficiency.
Designed with advanced functionalities like directed per-bank refresh, an on-chip temperature sensor, and partial-array self-refresh (PASR), this LPDDR4 SDRAM ensures reliable performance under various conditions. It also includes selectable output drive strength and clock-stop capability. Compliant with RoHS standards, the H2AB16G32E6C supports green packaging and is ideal for modern, low-power applications. For more information on our LPDDR4X SDRAM and other low power SDRAM solutions, please contact us.
Designed with advanced functionalities like directed per-bank refresh, an on-chip temperature sensor, and partial-array self-refresh (PASR), this LPDDR4 SDRAM ensures reliable performance under various conditions. It also includes selectable output drive strength and clock-stop capability. Compliant with RoHS standards, the H2AB16G32E6C supports green packaging and is ideal for modern, low-power applications. For more information on our LPDDR4X SDRAM and other low power SDRAM solutions, please contact us.