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DDR4 SDRAM Manufacturer
DDR3 SDRAM is being widely used today by businesses as a way to make DDR3 SDRAM can do a variety of other functions depending on what specific needs the business requires. To ensure that the requirements of this policy are met, Axeme - Hwaling Technology Co., Ltd. will keep providing and maintaining safe and healthy working conditions, equipment and systems of work, together with adequate information, instruction, training and supervision for all employees.
H2AB16G32E6C
16Gb (512Meg×32) Low Power DDR4 SDRAM
H2AB16G32E6C uses the double data rate architecture on the Command/Address (CA) bus to reduce the number of input pins in the system. Each command uses one clock cycle,during which command information is transferred on both the positive and negative edge of the clock. To achieve high-speed operation, our H2AB16G32E6C SDRAM adopt 16n-prefetch interface designed to transfer two data per clock cycle at the I/O pins.
A single read or write access for the H2AB16G32E6C effectively consists of a single 8n-bit wide, one clock cycle data transfer at the internal SDRAM core and eight corresponding n-bit wide,one-half-clock-cycle data transfer at the I/O pins. Read and write accesses to the H2AB16G32E6C are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. For H2AB16G32E6C devices, accesses begin with the registration of an Active command, which is then followed by a Read or Write command. The address and BA bits registered coincident with the Active command are used to select the row and the Bank to be accessed. The address bits registered coincident with the Read or Write command are used to select the Bank and the starting column location for the burst access.
A single read or write access for the H2AB16G32E6C effectively consists of a single 8n-bit wide, one clock cycle data transfer at the internal SDRAM core and eight corresponding n-bit wide,one-half-clock-cycle data transfer at the I/O pins. Read and write accesses to the H2AB16G32E6C are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. For H2AB16G32E6C devices, accesses begin with the registration of an Active command, which is then followed by a Read or Write command. The address and BA bits registered coincident with the Active command are used to select the row and the Bank to be accessed. The address bits registered coincident with the Read or Write command are used to select the Bank and the starting column location for the burst access.
Features :
- Ultra-low-voltage core and I/O power supplies
- VDD1 = 1.70–1.95V; 1.80V nominal
- VDD2 = 1.06–1.17V; 1.10V nominal
- VDDQ = 0.57–0.65V; 0.60V nominal
- Frequency range
- 1866MHz(data rate (per pin) range: 3733Mb/s) - 16n prefetch DDR architecture
- 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry
- Bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL)
- Programmable and on-the-fly burst lengths = 16, 32
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- On-chip temperature sensor to control self refresh rate
- Partial-array self refresh (PASR)
- Selectable output drive strength (DS)
- Clock-stop capability
- RoHS-compliant, “green” packaging
- Programmable VSS (ODT) termination
As a result of its commitment to R&D, manufacturing and quality control, Axeme - Hwaling Technology Co., Ltd. engineers reliable and long-lasting solutions as a partner for continuous improvement. With extensive expertise in engineering and product design, Axeme - Hwaling Technology Co., Ltd. able to offer value-added products to our customers. We review our offerings regularly to make sure our prices are competitive, if not the lowest available. For more details about our DDR3 SDRAM, please contact with us immediately.