Axeme - Hwaling Technology Co., Ltd.

Hwaling Technology is based in Taipei, Taiwan. As the interaction of Communication, Electronic Consumer and Computing gadgets has became the main stream in consumer lives. Hwaling practices his specialty with long-term experience in this memory field to drive quality products and services to customers.

128G-Bit 3.3V NAND FLASH MEMORY, H7A2DG21C1CX

Axeme - Hwaling Technology Co., Ltd. has a world-class team with shared values, which allows us to seek the right way to do things together as well as to help each other improve. Flash IC, flash memory are our main products, featuring its durable quality and long-lasting performance. We test our products on various quality parameters to ensure the quality of our products. Besides this, through offering products competitive prices and adhering to on time delivery schedule, we have developed healthy business relationship with our variegated clients.

H7A2DG21C1CX

128G-Bit 3.3V NAND FLASH MEMORY

The H7A2DG21C1CX (128G-bit) NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (DQx) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection (WP#) and monitor device status (R/B#).

The H7A2DG21C1CX (128G-bit) NAND Flash device additionally includes a synchronous data interface for high-performance I/O operations. When the synchronous interface is active, WE# becomes CLK and RE# becomes W/R#. Data transfers include a bidirectional data strobe (DQS).

This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign.

A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN).
Features :

  • Open NAND Flash Interface (ONFI) 2.3-compliant1
  • Multiple-level cell (MLC) technology
  • Organization
    – Page size: 8936 bytes (8192 + 744 bytes)
    – Block size: 256 pages (2048K + 186K bytes)
    – Plane size: 2 planes x 1064 blocks per plane
    – Device size: 128Gib =8512 blocks
  • Synchronous I/O performance4:
    – Up to synchronous timing mode 43
    – Clock rate: 10ns (DDR)
    – Read/write throughput per pin: 166MT/s
  • Asynchronous I/O performance:
    – Up to asynchronous timing mode 5
    – tRC/tWC: 20ns (MIN)
    – Read/write throughout per pin: 50MT/s
  • Array performance
    – Read Page: 130μs (MAX)
    – Program Page: 3200μs (MAX)
    – Erase Block: 15ms (MAX)
  • Operating voltage range
    – VCC: 2.7–3.6V
    – VCCQ: 2.7V-3.6V
  • Command set: ONFI NAND Flash Protocol•
  • Advanced Command Set
    – Program cache
    – Read cache sequential
    – Read cache random
    – One-time programmable (OTP) mode
    – Multi-plane commands
    – Multi-LUN operations
    – Copyback
  • Operating temperature:
    – Commercial: +10°C to +70°C
  • Package: 48-pin TSOP
  • RESET (FFh) required as first command after Power-on

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As a leading manufacturer of flash IC, flash memory, we not only provide professional flash IC, but also offer quality flash memory.We also make sure that defect less products reach to our clientele at cost effective method. We also follow ethical and see-through business policy with our clients in order to ensure horizontal running of business relation. If you have any questions about our H7A2DG21C1CX, or to place an order, please call our sales department and speak with any one of our professional representatives for further information.