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DDR4 SDRAM 8Gb
Welcome to Axeme - Hwaling Technology Co., Ltd., a leading DDR4 SDRAM manufacturer committed to delivering high-performance memory solutions. Our DDR4 SDRAM 8Gb modules are designed to meet the demanding needs of modern computing applications, offering superior speed and efficiency compared to previous generations. With our DDR4 8Gb SDRAM, you can expect enhanced data transfer rates and reduced power consumption, making it ideal for both consumer electronics and high-end computing systems. As a trusted SDRAM 8Gb DDR4 provider, we ensure our products adhere to rigorous quality standards to deliver reliable and high-quality memory solutions. Discover how Axeme - Hwaling Technology Co., Ltd.'s DDR4 SDRAM 8Gb can elevate your system's performance and efficiency today.
H2A908G08A6O
8Gb (64Mx16Banks×8) DDR4 SDRAM
The 8Gb DDR4 SDRAM is organized as 64Mbit x8 I/Os x 16banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 3200Mb/sec/ pin (DDR4-3200) for general applications.
The chip is designed to comply with the following key DDR4 SDRAM fea-tures such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset. All of the control and address inputs are synchronized with a pair of exter-nally supplied differential clocks. Inputs are latched at the crosspoint of dif-ferential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fash-ion. The address bus is used to convey row, column, and bank address information in a RAS/CAS multiplexing style.
The DDR4 device operates with a single 1.2V (1.14V~1.26V) power supply and 1.2V (1.14V~1.26V). The 8Gb DDR4 device is available in 78ball FBGAs.
The chip is designed to comply with the following key DDR4 SDRAM fea-tures such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset. All of the control and address inputs are synchronized with a pair of exter-nally supplied differential clocks. Inputs are latched at the crosspoint of dif-ferential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fash-ion. The address bus is used to convey row, column, and bank address information in a RAS/CAS multiplexing style.
The DDR4 device operates with a single 1.2V (1.14V~1.26V) power supply and 1.2V (1.14V~1.26V). The 8Gb DDR4 device is available in 78ball FBGAs.
Features :
- JEDEC standard 1.2V (1.14V~1.26V)
- VDDQ = 1.2V (1.14V~1.26V)
- 8-bit pre-fetch
- 16 internal banks (x8): 4 groups of 4 banks each
- Programmable CAS Latency (posted CAS): 10,11,12,13,14,15,16,17,18,19,20,22,24
- Programmable Additive Latency: 0, CL-2 or CL-1 clock
- Burst Length: 8, 4 with tCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS]
- Bi-directional Differential Data-Strobe
- Internal (self) calibration: calibration through ZQ pin (RZQ: 240 ohm ± 1%)
- On Die Termination using ODT pin
- Connectivity Test Mode (TEN) is Supported
- Asynchronous Reset
- CRC for Read/Write data security
- Command address parity check
- DBI (Data Bus Inversion)
- Gear down mode
- POD (Pseudo Open Drain) interface for data input/output
- Internal VREF for data inputs
- External VPP for DRAM Activating Power
- PPR and sPPR is supported
Axeme - Hwaling Technology Co., Ltd. is a premier DDR4 SDRAM manufacturer, delivering top-tier DDR4 SDRAM 8Gb modules designed for exceptional performance and reliability. Our DDR4 8Gb SDRAM are crafted to enhance data transfer rates and reduce power consumption, making them ideal for both high-performance computing and everyday applications. As specialists in SDRAM 8Gb DDR4 technology, we ensure that our modules meet stringent quality standards, providing you with a dependable and efficient memory solution. Explore how Axeme - Hwaling Technology Co., Ltd.'s DDR4 SDRAM 8Gb can optimize your system's performance and drive technological advancement.