Flash IC Supplier in Taiwan
H7A44G25G4IX
4G-BIT 3.3V SPI-NAND FLASH MEMORY
– Single-level cell (SLC) technology
- Page size: 4352 bytes (4096 + 256 bytes)
- Block size: 64 pages (256K + 16K bytes)
- Device size: 4Gb (2048 blocks)
- Standard SPI: CLK, CS#, SI, SO, WP#
- Dual SPI: CLK, CS#, SIO0, SIO1, WP#
- Quad SPI: CLK, CS#, SIO0, SIO1, SIO2, SIO3
- 108MHz for fast read
- Quad I/O data transfer up to 432Mbits/s
- 4K-Byte cache for fast random read
- Write protect all/portion of memeory via software
- Lockable 16K-Byte OTP region
- 128-Bit Unique ID for each device
- Parameter Page
– Page Program time: 400us typical
– Block Erase time: 3.5ms typical
– Page Read time: 175us typical
– 8bit ECC, per 528 bytes (ECC always on)
– INTERNAL DATA MOVE by page with ECC
– Promissed golden block0
– WSON8 (8x6mm)
– All packages are RoHS Compliant and Halogen-free
– 60,000 PROGRAM/ ERASE cycles with 8bit/ 528bytes ECC