Axeme - Hwaling Technology Co., Ltd.

Hwaling Technology is based in Taipei, Taiwan. As the interaction of Communication, Electronic Consumer and Computing gadgets has became the main stream in consumer lives. Hwaling practices his specialty with long-term experience in this memory field to drive quality products and services to customers.

2G-Bit 3.3V PARALLEL SLC-NAND FLASH, H7A12G24G6IX

Axeme - Hwaling Technology Co., Ltd. offers 2G-Bit 3.3V PARALLEL SLC-NAND FLASH with superior quality and reasonable price. Also, offers excellent FLASH IC, Parallel NAND Flash, ensuring high quality and professional performance. Furthermore, we provide customized solutions to our clients based on their demands and assure the delivery of all consignments within the promised time-frame. We are highly lauded for our timely delivery, customization solutions, and flexible transaction modes. Welcome to contact with us if you are looking for highly efficient 2G-Bit 3.3V PARALLEL SLC-NAND FLASH.

H7A12G24G6IX

2G-Bit 3.3V PARALLEL SLC-NAND FLASH

The H7A12G24G6IX is a single 3.3v 2Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 128) bytes × 64 pages × 2048 blocks. The device has two 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 8 Kbytes: 2176 bytes × 64 pages).

The H7A12G24G6IX is a serial-type memory device which utilizes the I/O pins for both address and data input/ output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
Features :

  • Single Level per Cell (SLC) Technology
  • ECC requirement: 8bit/ 544Bytes
  • Power Supply Voltage
    - Voltage range: 2.7V ~ 3.6V
  • Organization
    - Page size: x8 (2048 + 128) bytes; 128- bytes spare area
    - Block size: x8 (128k + 8k) bytes
    - Plane size: 1024 Blocks per Plane
    - 2008 block (min) ~ 2048 block (max)
  • Modes
    – Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy
    – Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
  • Access time
    – Cell array to register: 25μs (max)
    – Serial Read Cycle: 25 ns (min) (CL=50pF)
  • Program/ Erase time
    – Auto Page Program: 300 μs /page (typ.)
    – Auto Block Erase: 3.5 ms /block (typ.)
  • Reliability
    – 10 Year Data retention (Typ)

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Our company is a reputed 2G-Bit 3.3V PARALLEL SLC-NAND FLASH manufacturer in Taiwan. Our professional environment attracts the highest qualified personnel in our industry. We have built a reputation that all of our associates are proud to represent. Everything we do as a company is based on reinforcing our position as the finest, most responsive solution provider in the 2G-Bit 3.3V PARALLEL SLC-NAND FLASH industry. Please feel free to contact us if you want to know more about 2G-Bit 3.3V PARALLEL SLC-NAND FLASH.