Axeme - Hwaling Technology Co., Ltd.

Hwaling Technology is based in Taipei, Taiwan. As the interaction of Communication, Electronic Consumer and Computing gadgets has became the main stream in consumer lives. Hwaling practices his specialty with long-term experience in this memory field to drive quality products and services to customers.

4G-Bit 3.3V PARALLEL SLC-NAND FLASH, H7A14G21G1IX

Axeme - Hwaling Technology Co., Ltd.'s highly trained professional workforce and dedicated engineers are committed to meet customer's satisfaction. Our 4G-Bit 3.3V PARALLEL SLC-NAND FLASH is widely appreciated by the customers due to their longer functional life, reasonable price, and less maintenance. We have well-maintained quality management comprising a team of experienced professionals that keeps an eye on 4G-Bit 3.3V PARALLEL SLC-NAND FLASH to ensure durability. If you want to know more relative information about 4G-Bit 3.3V PARALLEL SLC-NAND FLASH, please contact us immediately.

H7A14G21G1IX

4G-Bit 3.3V PARALLEL SLC-NAND FLASH

The H7A14G21G1IX is a single 3.3V 4Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048 blocks. The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 16 Kbytes: 4352 bytes × 64 pages).

The H7A14G21G1IX is a serial-type memory device which utilizes the I/O pins for both address and data input/ output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
Features :

  • Single Level per Cell (SLC) Technology
  • ECC requirement: 8bit/ 512Bytes
  • Power Supply Voltage
    - Voltage range: 2.7V ~ 3.6V
  • Organization
    - Page size: x8 (4096 + 256) bytes; 256- bytes spare area
    - Block size: x8 (256k + 16k) bytes
    - Plane size: 2048 Blocks per Plane or (256M + 16M) bytes
    - 2008 block (min) ~ 2048 block (max)
  • Modes
    – Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy
    – Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
  • Access time
    – Cell array to register: 25μs (max)
    – Serial Read Cycle: 25 ns (min) (CL=50pF)
  • Page Read/ Program
    – Random access: 25 μs (Max)
    – Sequential access: 25 ns (Min)
    – Program time/ Multiplane Program time: 300 μs (Typ)
  • Block Erase
    – Block Erase time: 3.5 ms (Typ)
  • Operating current
    – Read (25 ns cycle) 30 mA max.
    - Program (avg.) 30 mA max/ Erase (avg.) 30 mA max
    - Standby 50 μA max
  • Reliability
    – 10 Year Data retention (Typ), Blocks zero are valid

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Axeme - Hwaling Technology Co., Ltd. believes that providing the best-qualified products, excellent service, and advanced technology can create the most value for customers. As a leading manufacturer of 4G-Bit 3.3V PARALLEL SLC-NAND FLASH, we keep the world running in every area. 4G-Bit 3.3V PARALLEL SLC-NAND FLASH is one of our main products, featuring its high quality and attractive design. If you are looking for FLASH IC, Parallel NAND Flash, you are in the right place. At Axeme - Hwaling Technology Co., Ltd., you will find every kind of 4G-Bit 3.3V PARALLEL SLC-NAND FLASH that you can think of, with something for all kinds of business.