4G-Bit 3.3V PARALLEL SLC-NAND FLASH, H7A14G21G1IX
H7A14G21G1IX
4G-Bit 3.3V PARALLEL SLC-NAND FLASH
The H7A14G21G1IX is a serial-type memory device which utilizes the I/O pins for both address and data input/ output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
- Voltage range: 2.7V ~ 3.6V
- Page size: x8 (4096 + 256) bytes; 256- bytes spare area
- Block size: x8 (256k + 16k) bytes
- Plane size: 2048 Blocks per Plane or (256M + 16M) bytes
- 2008 block (min) ~ 2048 block (max)
– Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy
– Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
– Cell array to register: 25μs (max)
– Serial Read Cycle: 25 ns (min) (CL=50pF)
– Random access: 25 μs (Max)
– Sequential access: 25 ns (Min)
– Program time/ Multiplane Program time: 300 μs (Typ)
– Block Erase time: 3.5 ms (Typ)
– Read (25 ns cycle) 30 mA max.
- Program (avg.) 30 mA max/ Erase (avg.) 30 mA max
- Standby 50 μA max
– 10 Year Data retention (Typ), Blocks zero are valid